The 80th JSAP Autumn Meeting 2019

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[20p-E303-1~14] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 20, 2019 1:45 PM - 5:45 PM E303 (E303)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(Univ. of Yamanashi)

1:45 PM - 2:00 PM

[20p-E303-1] Characterizations of C-doped BaSi2 films formed by sputtering

〇Taira Nemoto1, Takuma Sato1, Masami Mesuda2, Hideto Kuramochi2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)

Keywords:semiconductor