[20p-E310-1~21] 15.4 III-V-group nitride crystals

△ [20p-E310-14] MOVPE growth and structural characterizations of GaN nanowires and
GaInN/GaN multi-quantum shells

〇Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Weifang Lu¹, Hideki Murkami¹, Mizuki Terazawa¹, Jun Uzuhashi², Takashi Sekiguchi², Tadakatsu Ohkubo², Jun Chen², Wei Yi², Kazuhiro Hono², Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,5 (1.Meijo Univ., 2.NIMS, 3.Koito Manufacturing CO., Ltd, 4.Toyada Gosei Co., Ltd, 5.Akasaki Research Center, Nagoya Univ)

Keywords:MOCVD, GaN nanowire