Study on growth of p-GaN shell in nanowire-LED using core-shell structure

Naoki Sone; Nanami Goto; Kazuyoshi Iida; Masaki Ohya; Weifang Lu; Hideki Murakami; Mizuki Terazawa; Jun Uzuhashi; Tadakatsu Ohkubo; Kazuhiro Hono; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-E310-1~21] 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Narihito Okada(Yamaguchi Univ.), Yoshio Honda(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

5:30 PM - 5:45 PM

[20p-E310-16] Study on growth of p-GaN shell in nanowire-LED using core-shell structure

〇Naoki Sone^1,4, Nanami Goto⁴, Kazuyoshi Iida^2,4, Masaki Ohya^2,4, Weifang Lu⁴, Hideki Murakami⁴, Mizuki Terazawa⁴, Jun Uzuhashi³, Tadakatsu Ohkubo³, Kazuhiro Hono³, Satoshi Kamiyama⁴, Tetsuya Takeuchi⁴, Motoaki Iwaya⁴, Isamu Akasaki^4,5 (1.KOITO MANUFACTURING, 2.TOYODA GOSEI, 3.NIMS, 4.Meijo Univ., 5.Nagoya Univ.)

Keywords:nanowire, GaN