Pit-reduction effect of Eu-doped GaN on GaN-related materials

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 20, 2019 1:15 PM - 7:00 PM E310 (E310)

Narihito Okada(Yamaguchi Univ.), Yoshio Honda(Nagoya Univ.), Tomoyuki Tanikawa(Osaka Univ.)

3:30 PM - 3:45 PM

〇Takaya Morikawa¹, Shuhei Ichikawa¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:gallium nitride, europium, pit