The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)

Hiroshi Yano(Univ. of Tsukuba), Yasunori Tanaka(AIST)

1:45 PM - 2:00 PM

[20p-E311-2] Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy on Nitrided
4H-SiC(000)/SiO2 Interfaces

〇(M1)Masato Narigasawa1, Eito Higa1, Mitsuru Sometani2, Tetsuo Hatakeyama2, Shinsuke Harada2, Takahide Umeda1 (1.Univ. of Tsukuba., 2.AIST.)

Keywords:SiC, MOS interface defect, ESR

電流検出電子共鳴分光の結果から、C面窒化4H-SiC/SiO2界面欠陥について議論する。