Evaluation of RPD defects by DLTS

Tomohiko Hara; Riku Wakita; Yuki Isogai; Takefumi Kamioka; Yoshio Ohshita

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-E314-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 20, 2019 1:30 PM - 5:15 PM E314 (E314)

Mitsuhiro Matsumoto(Panasonic), Ryosuke Ishikawa(Tokyo City Univ.)

1:30 PM - 1:45 PM

[20p-E314-1] Evaluation of RPD defects by DLTS

〇(M2)Tomohiko Hara¹, Riku Wakita¹, Yuki Isogai¹, Takefumi Kamioka^1,2, Yoshio Ohshita¹ (1.Toyota Technol Inst., 2.Meiji Univ.)

Keywords:plasma damage, DLTS, ITO

Reactive-plasma deposition (RPD) induced defects in an indium-tin oxide (ITO)/SiO₂/Si structure are evaluated by DLTS. A peak of electron traps is observed around 260K. This peak is shifted as the duration of the filling pulse decreases from 10 ms to 3 μs. This suggests there are two or more defects with different capture rate.