[20p-E314-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-E314-2] Evaluation of passivation of oxidized Si using LTEM and corona charging

〇Toshimitsu Mochizuki¹, Akira Ito², Katsuto Tanahashi¹, Hidetoshi Nakanishi², Iwao Kawayama³, Masayoshi Tonouchi³, Katsuhiko Shirasawa¹, Hidetaka Takato¹ (1.AIST, 2.SCREEN, 3.ILE, Osaka Univ.)

Keywords:Crystalline Silicon solar cells, Terahertz, Oxidized surfaces

Field-effect passivation of oxidized silicon wafer is evaluated using laser terahertz emission microscope (LTEM) in combination with corona charging and measured THz amplitude and waveform were quantitatively compared with voltage-charge (V-Q) method, which is widely accepted method for evaluation of field-effect passivation of semiconductor surfaces. The amplitude and waveform showed strong correlation with surface potential measured using V-Q method and showed sensitivity to the surface in the accumulation mode, where V-Q shows little sensitivity.