Plasma process induced damage evaluation in Si substrate for solar cells

Kouhei Onishi; Hara Yutaka; Nishihara Tappei; Kanai Hiroki; Kamioka Takefumi; Ohshita Yoshio; Ogura Atsushi

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-E314-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

Fri. Sep 20, 2019 1:30 PM - 5:15 PM E314 (E314)

Mitsuhiro Matsumoto(Panasonic), Ryosuke Ishikawa(Tokyo City Univ.)

2:15 PM - 2:30 PM

[20p-E314-4] Plasma process induced damage evaluation in Si substrate for solar cells

〇(M2)Kouhei Onishi¹, Hara Yutaka¹, Nishihara Tappei¹, Kanai Hiroki¹, Kamioka Takefumi¹, Ohshita Yoshio², Ogura Atsushi¹ (1.Meiji Univ., 2.Toyota Tech. Inst.)

Keywords:Solar cell

In this study, in order to identify the cause of damage to Si substrate in plasma process, evaluation was performed using samples with different oxygen concentration and carbon concentration.