[20p-E319-1~10] 【CS.6】 Code-sharing Session of 6.5 & 7.6

[20p-E319-3] Effect of supersonic molecular beam upon initial oxidation processes on Si(113)

〇SHINYA OHNO¹, Kazuma Tanaka¹, Hiraku Kodama¹, Akitaka Yoshigoe² (1.Yokohama Nat'l Univ., 2.JAEA)

Keywords:molecular beam, oxidation reaction, photoelectron spectroscopy

In three-dimensional channel structures, the MOS interfaces involve high-index planes. It is possible to reduce trap densities (Dit) by using Si(113) planes as almost equal to Si(001). In the present study, we used supersonic seeded molecular beam (SSMB) to control the oxidation reaction on Si(113). We report on the dependence of the reaction rate on translational energies, and discuss its origin based on the electronic states at the SiO2/Si interface..