4:45 PM - 5:15 PM
[20p-N304-8] Study on High Selective Conformal ALE by Surface Reaction Control
Keywords:Plasma, Etching, Semiconductor
High selective conformal etching is required for the fabrication of leading-edge semiconductor devices because of adopting 3D structure. We have developed plasma reactor with IR heating-lamp to achieve higher selective and more accurate conformal etching. In this paper, results of high selective conformal atomic layer etching (ALE) are shown controlling each surface reactions, modification and adsorption, independently.