The 80th JSAP Autumn Meeting 2019

Presentation information

Symposium (Oral)

Symposium (technical) » Latest trend on atomic layer processes

[20p-N304-1~10] Latest trend on atomic layer processes

Fri. Sep 20, 2019 1:30 PM - 5:45 PM N304 (N304)

Makoto Sekine(Nagoya Univ.), Takeshi Momose(Univ. of Tokyo), Kazuhiro Karahashi(Osaka univ.)

4:45 PM - 5:15 PM

[20p-N304-8] Study on High Selective Conformal ALE by Surface Reaction Control

Masaru Izawa1 (1.Hitachi High-Tech)

Keywords:Plasma, Etching, Semiconductor

High selective conformal etching is required for the fabrication of leading-edge semiconductor devices because of adopting 3D structure. We have developed plasma reactor with IR heating-lamp to achieve higher selective and more accurate conformal etching. In this paper, results of high selective conformal atomic layer etching (ALE) are shown controlling each surface reactions, modification and adsorption, independently.