[20p-PA7-1~8] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

△ [20p-PA7-2] Evaluation of etching characteristicson titanium-assisted high-speed anisotropic chemical vapor etching of silicon dioxide

〇Hironobu Nishida¹, Shin'ichi Warisawa¹, Reo Kometani¹ (1.Grad. Sch. of Front. Sci., Univ. of Tokyo)

Keywords:Metal-assisted Etching, etching of silicon dioxide, Titanium

Titanium(Ti)-assisted chemical vapor etching is a high-speed etching technique for silicon dioxide (SiO₂). In this study, we evaluated the influence of etching condition and interface composition between Ti and SiO₂ on the etching rate and the etching shape. We hypothesized that titanium silicide formed in the interface between Ti and SiO₂ was the factor of high-speed etching. In order to evaluate the influence of titanium silicide, annealed Ti was also used for etching. The etching rate of the sample using annealed Ti was lower than the sample using Ti, but the etching shape showed more anisotropy.