[20p-PB2-1~18] 7 Beam Technology and Nanofabrication (Poster)

[20p-PB2-9] Basic Study on Aluminum Multi-charged Ion Generation using ECR Ion Source

〇(B)Yutaro Matsui¹, Tsubasa Nakamura¹, Hideki Sasaoka¹, Toyohisa Asaji², Muneo Furuse¹ (1.NIT, Oshima, 2.NIT, Toyama)

Keywords:ECR ion source, mirror magnetic field, aluminum multi-charged ion

In semiconductor manufacturing, ion injection to dope the substrate material has become an indispensable technique in recent years. In this research, the basic study was carried out for generating aluminum multi-charged ion. The generation of multi-charged aluminum ions using the sputtering source was verified. As a result, Al⁺¹ (m/z; 27) was about 32.3 nA, when the sputtering voltage is -400 V. It was considered that the reason why the multi-charged ion was not detected was the behavior of Al atoms after sputtering.