The 80th JSAP Autumn Meeting 2019

Presentation information

Poster presentation

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-PB3-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Fri. Sep 20, 2019 1:30 PM - 3:30 PM PB3 (PB)

1:30 PM - 3:30 PM

[20p-PB3-5] Room-temperature differential negative resistance characteristics of hole-driven resonant tunneling diodes using atomic layer thin-film CaF2/Si heterostructures

Kizashi Mikami1, Kumagai Yoshiro1, Hirose Kodai1, Tomizawa Kanta1, Tonegawa Hiroki1, Kaneko Takumi1, Sato Honami1, Watanabe Masahiro1 (1.Tokyo Tech)

Keywords:resonant tunneling diode, quantum effect, nano structure