[20p-PB3-1~11] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-PB3-5] Room-temperature differential negative resistance characteristics of hole-driven resonant tunneling diodes using atomic layer thin-film CaF₂/Si heterostructures

〇Kizashi Mikami¹, Kumagai Yoshiro¹, Hirose Kodai¹, Tomizawa Kanta¹, Tonegawa Hiroki¹, Kaneko Takumi¹, Sato Honami¹, Watanabe Masahiro¹ (1.Tokyo Tech)

Keywords:resonant tunneling diode, quantum effect, nano structure