[21a-B12-1~8] 16.3 Bulk, thin-film and other silicon-based solar cells

[21a-B12-8] Effect of anti-reflection coating on electric field inside the photovoltaic modules

〇Yasushi Tachibana¹, Takeshi Toyoda¹, Sachiko Jonai², Yukiko Hara², Hajime Shibata², Atsushi Masuda² (1.IRII, 2.AIST)

Keywords:Potential Induced Degradation, Electric field, Anti-reflection coating

In order to verify the effect of cell surface structure with anti-reflection coating on potential induced degradation (PID), the electric field inside the cell was analyzed. In the case that the SiO₂ layer was formed under the SiN_x layer, the analysis results show that the electric field in the SiO₂ layer is stronger than that in the SiN_x layer. It is considered that the strong electric field inside the SiO₂ layer drifts Na to the cell. On the other hand, it was experimentally clarified that the PID was delayed for the module with the SiO₂ layer under the SiN_x layer on the cell. The results of the analysis contradict the above experimental results. It means that the PID delay effect for the cell with SiO₂ layer can not be explained by only electric field. And it suggests that the SiO₂ layer has a barrier effect against the invasion of Na into the cell.