The 80th JSAP Autumn Meeting 2019

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Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21a-B31-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 9:00 AM - 11:15 AM B31 (B31)

Tomoki Abe(Tottori Univ.)

9:15 AM - 9:30 AM

[21a-B31-2] Reactive-ion etching damage of ZnO and recovery by HCl dipping

〇Taizo Nakasu1, Kohei Shima1, Kazunobu Kojima1, Shigefusa Chichibu1 (1.IMRAM-Tohoku Univ.)

Keywords:ZnO, Reactive-ion etching, Time-resolved photoluminescence