[21a-C309-1~13] 6.1 Ferroelectric thin films

△ [21a-C309-13] Growth of ferroelectric semiconductor SbSI thin films by molecular beam epitaxy

〇Sotaro Inagaki¹, Masao Nakamura^2,3, Hiroki Hatada¹, Ryutaro Nishino¹, Fumitaka Kagawa^1,2, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN-CEMS, 3.JST-PRESTO)

Keywords:ferroelectric, thin film, photovoltaic effect

Crystals with broken inversion symmetry, as typified by ferroelectric materials, are known to show photovoltaic effect. Recently, the origin of this effect is theoretically revealed to be so-called the shift current driven by the Berry phase. In this study, toward the device application, we fabricated thin films of a representative ferroelectric semiconductor SbSI. Using molecular beam epitaxy combined with valved cell, we succeeded in fabricating thin films whose polarization axis orders normal to the substrate plane. We confirmed that the films show optical spectrum and ferroelectricity like the bulk crystals.