The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[21a-C309-1~13] 6.1 Ferroelectric thin films

Sat. Sep 21, 2019 9:00 AM - 12:30 PM C309 (C309)

Hironori Fujisawa(Univ. of Hyogo), Takao Shimizu(Tokyo Tech)

10:00 AM - 10:15 AM

[21a-C309-5] Study of crystal structures and piezoelectric properties on epitaxial (K,Na)NbO3 thin films grown on Si substrates

Geng Tan1, Takuya Fujita1, Sang Hyo Kweon1, Tomoyuki Koganezawa2, Isaku Kanno1 (1.Kobe Univ., 2.JASRI)

Keywords:lead-free thin films, In-situ XRD observation

(K,Na)NbO3 (KNN) lead-free thin films have been receiving much attention owing to their relatively high piezoelectric properties comparable to Pb(Zr,Ti)O3 (PZT) thin films. KNN thin films are expected to be suitable alternatives to PZT thin films. In order to improve the piezoelectric properties of KNN thin films, it is essential to understand the correlation between crystal structures and piezoelectric properties. In this study, we fabricated epitaxial KNN thin films on Si substrates and investigated the crystal structures and piezoelectric properties. We also measured synchrotron X-ray diffraction (XRD) of KNN thin films under applied DC voltages and compared with polycrystalline KNN thin films.