The 80th JSAP Autumn Meeting 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[21a-C309-1~13] 6.1 Ferroelectric thin films

Sat. Sep 21, 2019 9:00 AM - 12:30 PM C309 (C309)

Hironori Fujisawa(Univ. of Hyogo), Takao Shimizu(Tokyo Tech)

9:45 AM - 10:00 AM

[21a-C309-4] Doping effect on lead-free (K, Na)NbO3 thin films

〇(M2)Takuya Fujita1, Goon Tan1, Isaku Kanno1 (1.Kobe univ.)

Keywords:KNN, piezoelectric thin film, doping

Recently, lead-free (K, Na)NbO3 thin films have attracted much attention as candidates to replace PZT thin films. Doping is one of the effective way to improve the electrical and piezoelectric properties. However, there have been few reports of systematic investigations. In this study, we prepared doped KNN thin films by radio frequency magnetron sputtering method using multi targets; KNN targets and dopant targets such as Na and Mn. We investigated the doping effect on the crystal structure and the electrical and piezoelectric properties of KNN thin films.