2019年第80回応用物理学会秋季学術講演会

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6 薄膜・表面 » 6.4 薄膜新材料

[21a-C310-1~12] 6.4 薄膜新材料

2019年9月21日(土) 09:00 〜 12:15 C310 (C310)

西川 博昭(近畿大)

10:45 〜 11:00

[21a-C310-7] Pre-sputtering Condition for Crystallized Yttria Stabilized Zirconia (YSZ) Film Deposition on Cellulose Nanopaper (CNP) by Reactive Sputtering

〇(M1C)Jyotish Patidar1、Susumu Horita1 (1.JAIST)

キーワード:Reactive Sputtering, YSZ, low temperature

Previously, it was found that yttria stabilized zirconia (YSZ) film is quite effective to stimulate crystallization of amorphous Silicon (a-Si) at low temperature. For using the YSZ effect to fabricate electron devices, e.g., TFT, on a flexible substrate and environment friendly material of cellulose nanopaper (CNP), a crystallized YSZ must be deposited without plasma and thermal damage to CNP. Earlier, we have reported that a crystallized YSZ film can be deposited on CNP without any damage using DC magnetron sputtering with Ar and O2. In this meeting, we show that pre-sputtering condition or treatment of target surface before deposition is one of the important factors for deposition of a highly crystallized YSZ film. Films deposited with pre-sputtering at high O2 flow rates, showed better film qualities due to stabilization of discharge conditions.