[21a-E216-1~4] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [21a-E216-1] Influence of FeCo termination layer insertion on voltage-controlled magnetic anisotropy effect in the Ir-doped Fe/MgO junction

〇Takayuki Nozaki¹、Masaki Endo²、Tatsuya Yamamoto¹、Tomohiro Nozaki¹、Makoto Konoto¹、Hiroyuki Ohmori²、Yutaka Higo²、Hitoshi Kubota¹、Akio Fukushima¹、Masanori Hosomi²、Yoshishige Suzuki^1,3、Shinji Yuasa¹ (1.AIST、2.Sony Semiconductor Solutions Corp.、3.Osaka Univ.)

キーワード：Spintronics, Voltage-controlled magnetic anisotropy, Magnetic tunnel junction

Voltage-controlled magnetic anisotropy(VCMA) effect is a promising approach to realize the magnetization switching with ultra-low power. In this work, we investigated an influence of insertion of ultrathin FeCo termination layer in the Ir-doped Fe/MgO junctions. The introduction of CoFe alloy with Co-rich composition resulted in the enhancement of the VCMA coefficient and maximum value of -350 fJ/Vm was achieved.