[21a-E301-1~13] 13.7 Compound and power electron devices and process technology

[21a-E301-9] Fabrication of GaN FinFETs using selective area growth method

〇Hayato Mukai¹, Ken Takayama¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

Keywords:FinFET, selective area growth method, Leakage current