[21a-E310-1~10] 15.4 III-V-group nitride crystals

[21a-E310-10] Evaluation of GaN Substrate Sliced by Using Laser Slicing Techniques

〇Atsushi Tanaka^1,2, Yasunori Igasaki¹, Hiroshi Amano^1,2,3,4 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Nagoya Univ. ARC, 4.NU VBL)

Keywords:gallium nitride, Laser processing

Practical use of GaN on GaN devices has not progressed as expected. One of the reasons is that the price of the GaN substrate is very expensive. This time, we propose the GaN substrate cutting method using laser slice as a method that can contribute to the cost reduction of the substrate. In this presentation, we report the evaluation of GaN substrates splitted by laser slicing.