Effect of a SiC Low-Temperature Buffer Layer on SiC Epitaxial Growth on Top of an AlN/Si(110) substrate

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Sat. Sep 21, 2019 9:00 AM - 10:45 AM E311 (E311)

Shunta Harada(Nagoya Univ.)

9:30 AM - 9:45 AM

Yuki Nara¹, 〇Hiroki Kasai¹, Hideki Nakazawa¹ (1.Hirosaki Univ.)

Keywords:silicon carbide, aluminum nitride, pulsed laser deposition