[21a-PA2-1~31] 6.3 Oxide electronics

[21a-PA2-31] Fabrication and Investigation of Amorphous Solid-State Electrolyte Film for InGaZnO Transistors with Electric Double Layer

〇Kohei Fujimoto¹, Tetsuya Asano¹, Mami Fujii¹, Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

Keywords:IGZO, Semiconductor