[21a-PA2-1~31] 6.3 Oxide electronics

[21a-PA2-5] Spin current transmission at Y₃Fe₅O₁₂/IrO₂ interfaces

〇(M1)Kenta Fukushima¹, Naoki Moriuchi¹, Takanori Kida², Masayuki Hagiwara², Kohei Ueda¹, Jobu Matsuno¹ (1.Osaka Univ., 2.AHMF, Osaka Univ.)

Keywords:interface, oxide

We have focused on Y₃Fe₅O₁₂ (YIG)/IrO₂ bilayers, which are expected to show higher spin to charge current conversion ratio compared to widely used YIG/Pt bilayers in terms of magnetization control by spin current. We measured temperature dependence of magnetization of the YIG ferromagnetic layer sputtered under the optimized condition to find the ideal saturation magnetization of 5 µB/f.c. at 10 K, which is equal to that of bulk YIG crystals. With this optimized YIG layer, we measure spin hall magnetoresistance (SMR) of the YIG/IrO₂ bilayers in order to clarify the spin to charge current conversion efficiency.