The 80th JSAP Autumn Meeting 2019

Presentation information

Print

Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21a-PA3-1~7] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

[21a-PA3-3] Effects of post-annealing conditions on crystal structure and electrical properties of Mg2Si1-xSnx thin films

〇(M2)Syotaro Fuse1, Hiroshi Katsumata1 (1.Meiji Univ.)

Keywords:semiconductor, Mg2Si, co-sputtering