[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

▲ [21a-PB1-25] Amorphous-Carbon Barrier against Moisture for Cu Metallization

〇(D)Ploybussara Gomasang¹, Kazuyoshi Ueno^1,2 (1.Shibaura Inst. of Tech., 2.SIT RCGI)

Keywords:Copper metallization reliability, Amorphous carbon, XPS

To improve the reliability of Cu metallization in long-term storage, a-C deposited by sputtering is investigated. The a-C layer is found to be a potential barrier against moisture by preventing the formation of high oxidation state on the Cu surface (CuO). It is expected to be a practical method for Cu metallization due to low process temperature. The potential coordination chemistry to a-C will be an interesting approach to improve the efficiency of the a-C barrier against moisture for future targets.