Characterization of top-gate MoS<sub>2 </sub>MOSFETs with PEALD-ZrO<sub>2 </sub>gate dielectric

WENHSIN CHANG; Naoya Okada; Hidehiro Asai; Koichi Fukuda; Mitsuhiro Okada; Takahiko Endo; Yasumitsu Miyata; Toshifumi Irisawa

Presentation information

Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology (Poster)

[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

Sat. Sep 21, 2019 9:30 AM - 11:30 AM PB1 (PB)

9:30 AM - 11:30 AM

[21a-PB1-61] Characterization of top-gate MoS₂MOSFETs with PEALD-ZrO₂gate dielectric

〇WENHSIN CHANG¹, Naoya Okada¹, Hidehiro Asai¹, Koichi Fukuda¹, Mitsuhiro Okada¹, Takahiko Endo², Yasumitsu Miyata², Toshifumi Irisawa¹ (1.AIST, 2.TMU)

Keywords:MoS2, Top-gate, MOSFET

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Presentation information

[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

[21a-PB1-61] Characterization of top-gate MoS2 MOSFETs with PEALD-ZrO2 gate dielectric

[21a-PB1-61] Characterization of top-gate MoS₂MOSFETs with PEALD-ZrO₂gate dielectric