[21a-PB1-1~86] 17 Nanocarbon Technology (Poster)

▲ [21a-PB1-65] N-type Dopant Incorporated Multilayer MoS₂-Field Effect Transistors

〇MuhammadShamimAl Mamun¹, Hiroki Waizumi¹, Tsuyoshi Takaoka², Md Iftekhar Alam¹, Yudai Tanaka¹, Tadahiro Komeda² (1.Tohoku University, 2.IMRAM)

Keywords:Melamine, Caffeine, n-type dopant

Among Transition metal dichalcogenides (TMDs), molybdenum disulfide (MoS₂) has been widely investigated for their potential as a channel material for electronic and optoelectronic devices. For the improvement of the MoS₂ characteristics, doping technique has been studied as it can replace the conventional method of doping because it does not damage the lattice of channel material and it can easily be controlled. Different molecules or nanoparticles have been used for the doping process, in our study we are going to report doping with the Melamine and Caffeine as a n-type dopant. The extracted field effect mobility as well as current were improved compared with the pristine device. The E_2g and A_1g peaks of the pristine sample appear around 383.4 and 408.2 cm^-1, respectively. After doping process, both E_2g and A_1g peaks show a downward shift which indicates increasing electron concentration for an n-type doping system. AFM and TOF-SIMS were taken to confirm the presence of molecules on the MoS₂ surface.