[Highlight] Demonstration of Over 10-A β-Ga<sub>2</sub>O<sub>3</sub>Schottky Barrier Diodes

Kohei Sasaki; Akio Takatsuka; Fumio Otsuka; Quang Tu Thieu; Ravikiran Lingaparthi; Daiki Wakimoto; Shigenobu Yamakoshi; Akito Kuramata

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

4:00 PM - 4:15 PM

[21p-B31-13] [Highlight] Demonstration of Over 10-A β-Ga₂O₃Schottky Barrier Diodes

〇Kohei Sasaki¹, Akio Takatsuka¹, Fumio Otsuka¹, Quang Tu Thieu¹, Ravikiran Lingaparthi¹, Daiki Wakimoto¹, Shigenobu Yamakoshi¹, Akito Kuramata¹ (1.Novel Crystal Tech.)

Keywords:Ga2O3, Schottky barrier diode, SBD

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Presentation information

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-13] [Highlight] Demonstration of Over 10-A β-Ga2O3Schottky Barrier Diodes

[21p-B31-13] [Highlight] Demonstration of Over 10-A β-Ga₂O₃Schottky Barrier Diodes