Change of the electrical properties as a function of annealing temperarure for Pt/Al2O3/β-Ga2O3 MOS capacitors

Masafumi Hirose; Toshihide Nabatame; Erika Maeda; Akihiko Ohi; Naoki Ikeda; Yoshihiro Irokawa; Hideo Iwai; Hideyuki Yasufuku; Satoshi Kawada; Makoto takahashi; Kazuhiro Ito; Yasuo Koide; Hajime Kiyono

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

4:15 PM - 4:30 PM

[21p-B31-14] Change of the electrical properties as a function of annealing temperarure for
Pt/Al₂O₃/β-Ga₂O₃ MOS capacitors

〇(M1)Masafumi Hirose^1,2, Toshihide Nabatame², Erika Maeda^1,2, Akihiko Ohi², Naoki Ikeda², Yoshihiro Irokawa², Hideo Iwai², Hideyuki Yasufuku², Satoshi Kawada², Makoto takahashi³, Kazuhiro Ito³, Yasuo Koide², Hajime Kiyono¹ (1.SIT, 2.NIMS, 3.Joining and Welding Research Institute, Osaka University)

Keywords:Ga2O3, MOS capacitor

Presentation information

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-14] Change of the electrical properties as a function of annealing temperarure forPt/Al2O3/β-Ga2O3 MOS capacitors

[21p-B31-14] Change of the electrical properties as a function of annealing temperarure for
Pt/Al₂O₃/β-Ga₂O₃ MOS capacitors