Thermodynamic Study on HVPE of Ga2O3 Using GaCl3 or GaCl as a Ga Source

Takashi Kamo; Ryo Miura; Nao Takekawa; Rie Togashi; Ken Goto; Yoshinao Kumagai

Presentation information

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

1:45 PM - 2:00 PM

[21p-B31-5] Thermodynamic Study on HVPE of Ga₂O₃ Using GaCl₃ or GaCl as a Ga Source

〇Takashi Kamo¹, Ryo Miura¹, Nao Takekawa¹, Rie Togashi², Ken Goto¹, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agri. and Tech., 2.Sophia Univ., 3.TUAT IGIR)

Keywords:gallium oxide, halide vapor phase epitaxy, thermodynamic analysis

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Presentation information

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-5] Thermodynamic Study on HVPE of Ga2O3 Using GaCl3 or GaCl as a Ga Source

[21p-B31-5] Thermodynamic Study on HVPE of Ga₂O₃ Using GaCl₃ or GaCl as a Ga Source