1:30 PM - 1:45 PM
[21p-B31-4] Influence of Growth Temperature and Input VI/III Ratio on HVPE Growth of β-Ga2O3
Keywords:Gallium Oxide, Halide Vapor Phase Epitaxy
Oral presentation
Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)
Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)
1:30 PM - 1:45 PM
Keywords:Gallium Oxide, Halide Vapor Phase Epitaxy