Ken Goto

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Speaker, Author, Co-Author

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Oral presentation
| Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

1:30 PM - 1:45 PM

[21p-B31-4] Influence of Growth Temperature and Input VI/III Ratio on HVPE Growth of β-Ga₂O₃

〇Ken Goto¹, Ryo Miura¹, Takashi Kamo¹, Nao Takekawa¹, Hisashi Murakami^1,2, Yoshinao Kumagai^1,2 (1.Tokyo Univ. of A & T, 2.TUAT IGIR)