[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-6] High-aspect ultra-thin Ga₂O₃ nanowall structures with 7nm-width fabricated by Hydrogen environment anisotropic thermal etching of (010) β-Ga₂O₃

〇Yuuki Ooe¹, Yusei Kawasaki¹, Daichi Ito¹, Yuta Moriya¹, Kouki Abe¹, Kentaro Kinoshita¹, Rie Togashi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Photonics Research Center)

Keywords:Gallium Oxide, etching, nanowall

Gallium oxide Ga₂O₃ has a large band gap of 4.5 eV and good electrical characteristics, and is expected to have various applications centered on power devices. In recent years, vertical transistors using Ga₂O₃ have been reported, and etching techniques capable of forming a high aspect structure with low damage have become important in order to improve the versatility and performance of device applications. We proposed a hydrogen atmosphere anisotropic thermal etching (HEATE) method using thermal decomposition reaction in a low pressure hydrogen atmosphere, and reported on the etching characteristics of β-Ga₂O₃. In this report, we report the fabrication of b-Ga2O3 high-aspect nanowall arrays by HEATE using the slowest (100) surface.