The 80th JSAP Autumn Meeting 2019

Presentation information

Print

Oral presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[21p-B31-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Sep 21, 2019 12:45 PM - 4:30 PM B31 (B31)

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takumi Ikenoue(Kyoto Univ.)

2:45 PM - 3:00 PM

[21p-B31-8] Characterization of ε-Ga2O3 films grown by THVPE using Spectroscopic Ellipsometry

〇Takumi Moriyama1, Yoko Wasai1, Nao Takekawa2, Hisashi Murakami2 (1.HORIBA TECHNO SERVICE, 2.Tokyo Univ. of Agri. & Tech.)

Keywords:Spectroscopic Ellipsometry, epsilon-Ga2O3