[21p-E216-1~6] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [21p-E216-2] Realizing oscillation of all-in-plane spin-torque-oscillator for microwave assisted magnetic recording

〇H. Sepehri-Amin¹、W. Zhou¹、Y. Sakuraba¹、K. Hono¹ (1.NIMS, Tsukuba)

キーワード：Spin torque oscillator

Microwave assisted magnetic recording (MAMR) is considered as one of the most promising candidates for next generation higher areal density magnetic recording technology. For MAMR writer, spin torque oscillator (STO) is required that should have a size of 30-40 nm and be able to generate large μ₀H_ac > 0.1 T with a frequency of 20-30 GHz at a small current density J<1.0×10⁸ A/cm² [1]. Recently, we have designed and demonstrated so called all-in-plane STO for MAMR that consist of a spin-injection-layer (SIL) and a field-generating-layer (FGL) with a metallic spacer [2,3]. In this device, since both SIL and FGL oscillate during operation of STO, the oscillation behavior of each layer is not well understood. In this work, we realize the oscillation of each layer using micromagnetic simulations. The results will be compared with the experimental results.