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▲ [21p-E301-1] Vertical Enhancement-Mode β-Ga2O3 MOSFETs with a Current Aperture
Keywords:gallium oxide, vertical transistor, enhancement-mode
This paper presents vertical enhancement-mode Ga2O3 MOSFETs with a current aperture fabricated by using Si- and N-ion implantation doping. The typical device demonstrated normally-off operation with a positive threshold voltage of +3.2 V, a large drain current on/off ratio exceeding 7×106, and an off-state breakdown voltage of 260 V.