[21p-E301-1~7] 13.7 Compound and power electron devices and process technology

[21p-E301-4] Characteristics of terahertz emissions from nitride semiconductor heterostructures

〇Kota Yamahara¹, Abdul Mannan¹, Kazunori Serita¹, Hironaru Murakami¹, Hidetoshi Nakanishi², Masataka Higashiwaki³, Masayoshi Tonouchi¹, Iwao Kawayama¹ (1.ILE Osaka Univ., 2.SCREEN, 3.NICT)

Keywords:terahertz, nitride semiconductor, interface