[21p-E310-1~12] 15.4 III-V-group nitride crystals

[21p-E310-3] Study of Si-ion-implantation Process on High-purity HVPE-AlN Substrates to Form n-type Region

〇Yudai Shimizu¹, Daichi Saito¹, Nao Takekawa¹, Ken Goto¹, Toru Nagashima², Reo Yamamoto², Bo Monemar³, Yoshinao Kumagai^1,4 (1.Tokyo Univ. of Agri. and Tech., 2.Tokuyama Corporation, 3.Linkoping Univ., 4.TUAT IGIR)

Keywords:ion implantation, aluminum nitride, ultra wide bandgap semiconductor