The 80th JSAP Autumn Meeting 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-E310-1~12] 15.4 III-V-group nitride crystals

Sat. Sep 21, 2019 12:45 PM - 4:00 PM E310 (E310)

Atsushi Kobayashi(Univ. of Tokyo), Koichi Naniwae(USHIO OPTO SEMICONDUCTORS, INC.)

1:30 PM - 1:45 PM

[21p-E310-4] Infuluence of InGaN underlying layer on device characteristics of AlGaN/GaN HEMT

〇(M1)Toshifumi Nomura1, Hideyuki Itakura1, Motoki Tamura2, Narihito Okada1,2, Kazuyuki Tadatomo1,2 (1.Grad. School of Sci. & Eng. for Innovation, Yamaguchi Univ., 2.Department of Eng, Yamaguchi Univ.)

Keywords:HMET, AlGaN/GaN, underlying layer