[21p-E310-1~12] 15.4 III-V-group nitride crystals

△ [21p-E310-7] Evaluation of the Band Structure at Metal/GaN Interfaces Using Hard X-ray Photoelectron Spectroscopy

〇Hirotaka Mizushima¹, Ryoji Arai¹, Yuta Inaba¹, Shunsuke Yamashita¹, Yudai Yamaguchi¹, Yuya Kanitani¹, Yoshihiro Kudo¹, Tatsushi Hamaguchi¹, Rintaro Koda¹, Katsunori Yanashima¹, Shigetaka Tomiya¹ (1.Sony Corporation)

Keywords:Hard X-ray Photoelectron Spectroscopy, Gallium Nitride, Energy band structure

We developed quantitative evaluation method of the band structure at metal/GaN interface by Hard X-ray Photoelectron Spectroscopy(HAXPES) to reveal the electronic structure which is the origin of the contact resistivity at the interface. In Mg low-doped GaN sample, it is found that HAXPES spectrum cannot be interpreted by the conventionally simple band bending model. By assuming the presence of the interface layer and adopting the 2 layers band bending model including it, we succeeded in extracting the band structure which can reproduce experimental results.