Ryo Nagai

→ Search for Ryo Nagai in Google Scholar

Speaker, Author, Co-Author

Sun. Mar 10, 2019 9:00 AM - 12:00 PM W934 (W934)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:45 AM - 11:00 AM

[10a-W934-7] Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core

〇Ryo Nagai¹, Shuntaro Fujimori¹, Takuya Maehara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)