Toshiki Nishimoto

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:00 AM - 11:45 AM W934 (W934)

Oral presentation
| 13 Semiconductors
| 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[11a-W934-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

11:00 AM - 11:15 AM

[11a-W934-9] First-principles study of segregation effects on Schottky barrier at metal/Ge interfaces

〇(M2)Toshiki Nishimoto¹, Takashi Nakayama¹ (1.Chiba Univ.)