Naoyuki Kishimoto

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PA4 (PA)

Poster presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:30 PM - 3:30 PM

[11p-PA4-2] Effect of Gate-Channel Distance Parameters on Electrical Properties of GaInSb Channel HEMT Structure

〇Naoyuki Kishimoto¹, Yuki Endoh¹, Takuya Hayashi¹, Mizuho Hiraoka¹, Ryuto Machida¹, Akira Endoh¹, Hiroki I. Fujishiro¹ (1.TUS)