11:30 AM - 11:45 AM
△ [11a-W641-10] Investigation of InGaZnO Transistors with Solid-State Electric Double Layer as a Gate
〇Yoshitaka Watanabe1, Asano Tetsuya1, Fujii Mami1, Juan Paolo Bermundo1, Ishikawa Yasuaki1, Uraoka Yukiharu1, Adachi Hedeaki1 (1.NAIST)