Manabu Mitsuhara

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S422 (S422)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

12:00 PM - 12:15 PM

[11a-S422-10] Comparison of thickness-dependence of structural degradation in tensile-strained GaAsSb and InGaAs layers grown on InP substrates

〇Manabu Mitsuhara¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Takahiro Gotow², Mitsuru Takenaka², Shinichi Takagi² (1.NTT Device Technology Labs, 2.The Univ. of Tokyo)

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