Masahiro Nakahara

→ Search for Masahiro Nakahara in Google Scholar

Speaker, Author, Co-Author

Tue. Mar 12, 2019 1:15 PM - 3:30 PM M113 (H113)

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[12p-M113-1~9] 15.5 Group IV crystals and alloys

2:15 PM - 2:30 PM

[12p-M113-5] Effect of Si substrate orientation on epitaxial growth of SiGe by printing and firing

〇(D)Masahiro Nakahara^1,4, Shogo Fukami¹, Mel F. Hainey, Jr.¹, Yoshihiko Nakagawa¹, Keisuke Arimoto², Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Kensaku Maeda³, Kozo Fujiwara³, Marwan Dhamrin⁴, Noritaka Usami¹ (1.Nagoya Univ., 2.CCST, Univ. Yamanashi, 3.IMR, Tohoku Univ., 4.Toyal)

▲